Surface charge ordering transition: alpha phase of Sn/Ge(111)

被引:217
作者
Carpinelli, JM
Weitering, HH
Bartkowiak, M
Stumpf, R
Plummer, EW
机构
[1] OAK RIDGE NATL LAB, DIV SOLID STATE, OAK RIDGE, TN 37831 USA
[2] SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
关键词
D O I
10.1103/PhysRevLett.79.2859
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have identified and characterized a charge-density wave transition (T-c similar to -60 degrees C) in the low-coverage ct phase of the Sn/Ge(111) interface both experimentally and theoretically. Charge ordering is accompanied by a structural distortion from (root 3 x root 3)R30 degrees to (3 x 3) symmetry. Density-functional theory calculations are unable to correctly reproduce the observed ground state and, more importantly, indicate that Fermi surface nesting does not play a role in this transition. Both signal the importance of many-body effects in this system. Experiment and theory indicate that the Sn/Ge(111) overlayer is fundamentally different from the Pb/Ge(111) overlayer previously reported.
引用
收藏
页码:2859 / 2862
页数:4
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