SUBMONOLAYER PHASES OF PB ON SI(111)

被引:115
作者
GANZ, E [1 ]
XIONG, FL [1 ]
HWANG, IS [1 ]
GOLOVCHENKO, J [1 ]
机构
[1] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138
来源
PHYSICAL REVIEW B | 1991年 / 43卷 / 09期
关键词
D O I
10.1103/PhysRevB.43.7316
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present conclusive results on the structures and coverages of the submonolayer phases of Pb on the Si(111) 7 x 7 surface based on scanning-tunneling-microscopy, low-energy-electron-diffraction, and Rutherford backscattering measurements. For room-temperature deposition at low coverage on the 7 x 7 surface, we find that Pb atoms occupy sites above and between the Si adatoms (with a preference for the faulted half of the unit cell) leaving the 7 x 7 structure intact. After annealing to 450-degrees-C, some Pb atoms occupy Si(111) 7 x 7 adatom sites, while others have nucleated to form small areas of an unusual square-root 3 x square-root 3 phase which has a 1:1 ratio of Si:Pb.
引用
收藏
页码:7316 / 7319
页数:4
相关论文
共 19 条