Spatially-resolved valence-electron energy-loss spectroscopy of Zr-oxide and Zr-silicate films

被引：8

作者：

Ikarashi, N ^{[1
]}

Manabe, K ^{[1
]}

机构：

[1] NEC Corp Ltd, Silicon Syst Res Lab, Sagamihara, Kanagawa 2291198, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 22期

关键词：

D O I：

10.1063/1.1483130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examined electronic structures in Zr-oxide (ZrO2) and Zr-silicate (ZrxSi1-xO2) films deposited on Si substrates by using valence-electron energy-loss spectroscopy combined with scanning transmission electron microscopy (the electron probe diameter was about 0.3 nm). Our analysis indicated that both valence-electron excitations in ZrO2 and in SiO2 occurred in the ZrxSi1-xO2 films. Therefore, the band gaps in the ZrxSi1-xO2 films should be dominated by an energy gap between O 2p and Zr 4d states. (C) 2002 American Institute of Physics.

引用

页码：4127 / 4129

页数：3

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