Interband transitions of crystalline and amorphous SiO2:: An electron energy-loss spectroscopy (EELS) study of the low-loss region

被引：48

作者：

Garvie, LAJ ^{[1
]}

Rez, P

Alvarez, JR

Buseck, PR

机构：

[1] Arizona State Univ, Dept Geol, Tempe, AZ 85282 USA

[2] Arizona State Univ, Dept Chem Biochem, Tempe, AZ 85282 USA

[3] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA

[4] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 106卷 / 05期

基金：

美国国家科学基金会;

关键词：

insulators; dielectric response; electronic band structure; electron energy loss spectroscopy;

D O I：

10.1016/S0038-1098(98)00021-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Surface and bulk low-loss spectra of alpha-quartz (c-SiO2), SiO2 glass (am-SiO2) and opal were studied by electron energy-loss spectroscopy (EELS) with a transmission electron microscope (TEM). Four interband transitions with similar energies occur in all samples. These transitions were investigated by comparison with published optical data and with the valence and joint density of states calculated by the pseudopotential method. The interband transitions arise from maxima in the valence-band density of states. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：303 / 307

页数：5

共 27 条

[1]

ALVAREZ JR, UNPUB SOLID STATE CO

[2] INTERACTION OF LOW-ENERGY ELECTRONS WITH SILICON DIOXIDE [J].