Deep level transient spectroscopy of CdS/CdTe thin film solar cells

被引：31

作者：

Lourenco, MA

Yew, YK

Homewood, KP

Durose, K

Richter, H

Bonnet, D

机构：

[1] UNIV SURREY, DEPT ELECT & ELECT ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND

[2] UNIV DURHAM, DEPT PHYS, DURHAM DH1 3LE, ENGLAND

[3] ANTEC GMBH, D-65779 KELKHEIM, GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 03期

关键词：

D O I：

10.1063/1.366285

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep levels in polycrystalline n-CdS/p-CdTe photovoltaic structures have been studied by deep Level transient spectroscopy (DLTS). The results were obtained from cells which have undergone different post-deposition treatment (as-deposited, heat treated, and heat treated in the presence of CdCl2). The DLTS results showed a deep level distribution independent of the post-deposition treatment. For all samples the spectra were dominated by a hole trap, localized at E-V+0.48 eV. Metastable hole and electron traps were also observed, mainly in the heat treated (with and without a CdCl2 layer) devices. (C) 1997 American Institute of Physics.

引用

页码：1423 / 1426

页数：4

共 20 条

[1] Dependence of CdS/CdTe thin film solar cell characteristics on the processing conditions [J].