Bias-voltage-induced asymmetry in nanoelectronic Y-branches

Pronounced asymmetries of electrical properties are observed in nanoelectronic, symmetric GaAs/AlGaAs Y-branches. Finite voltages V-l and V-r applied to the left- and right-hand side branch reservoir of a symmetric, ballistic Y-branch switching device in push-pull fashion (i.e., V-l=-V-r) lead to a negative output voltage V-s of the floating, central stem reservoir located between the two branches. We explain our observations exploiting the ballistic nature of the electron transport in the device. (C) 2001 American Institute of Physics.