Evidence of pore correlation in porous silicon:: An x-ray grazing-incidence study -: art. no. 245416

被引:14
作者
Chamard, V
Bastie, P
Le Bolloch, D
Dolino, G
Elkaïm, E
Ferrero, C
Lauriat, JP
Rieutord, F
Thiaudière, D
机构
[1] European Synchrotron Radiat Facil, F-38043 Grenoble, France
[2] Univ Grenoble 1, Spectrometrie Phys Lab, CNRS, UMR 5588, F-38402 St Martin Dheres, France
[3] Lab Utilisat Rayonnement Electromagnet, F-91405 Orsay, France
[4] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble 9, France
来源
PHYSICAL REVIEW B | 2001年 / 64卷 / 24期
关键词
D O I
10.1103/PhysRevB.64.245416
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The structure of porous silicon is investigated by grazing incidence x-ray scattering. Using GISAXS (grazing incidence small-angle x-ray scattering), a systematic pore correlation is observed for all porous silicon types. The quantitative analysis of the measurement has been performed for the p(-) -type sample, using a spherical model of pores and an isotropic distribution of scattering particles, leading to a typical pore size of 6.2 nm and to a particle-particle correlation length of 8.6 nm. In addition for this type of porous silicon, the morphology of the surface and interface of the layer have been studied by specular and off-specular reflectivity. The roughening due to the pore front propagation is quantified and the interface instability of p(-)-type porous silicon is observed.
引用
收藏
页码:2454161 / 2454164
页数:4
相关论文
共 21 条
[21]   X-ray and neutron reflectivity [J].
Tolan, M ;
Press, W .
ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1998, 213 (06) :319-336