Spin transference and magnetoresistance amplification in a transistor

被引：27

作者：

Dery, H ^{[1
]}

Cywinski, L ^{[1
]}

Sham, LJ ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

来源：

PHYSICAL REVIEW B | 2006年 / 73卷 / 16期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.73.161307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of transference of the spin-diffusion effects in the semiconductor channel of a system with three magnetic terminals. A notable result of technological consequences is the room-temperature amplification of the magnetoresistive effect, integrable with electronics circuits, demonstrated by computation of current dependence on magnetization configuration in such a system with currently achievable parameters.

引用

页数：4

共 31 条

[1] Spin injection and relaxation in ferromagnet-semiconductor heterostructures [J].

Adelmann, C ;

Lou, X ;

Strand, J ;

Palmstrom, CJ ;

Crowell, PA .

PHYSICAL REVIEW B, 2005, 71 (12)

[2] Spin-polarized electron transport at ferromagnet/semiconductor Schottky contacts [J].

Albrecht, JD ;

Smith, DL .

PHYSICAL REVIEW B, 2003, 68 (03)

[3] GIANT MAGNETORESISTANCE OF (001)FE/(001) CR MAGNETIC SUPERLATTICES [J].

BAIBICH, MN ;

BROTO, JM ;

FERT, A ;

VANDAU, FN ;

PETROFF, F ;

EITENNE, P ;

CREUZET, G ;

FRIEDERICH, A ;

CHAZELAS, J .

PHYSICAL REVIEW LETTERS, 1988, 61 (21) :2472-2475

[4]

BERNSTEIN E, 1969, TUNNELING PHENOMENA

[5] ENHANCED MAGNETORESISTANCE IN LAYERED MAGNETIC-STRUCTURES WITH ANTIFERROMAGNETIC INTERLAYER EXCHANGE [J].

BINASCH, G ;

GRUNBERG, P ;

SAURENBACH, F ;

ZINN, W .

PHYSICAL REVIEW B, 1989, 39 (07) :4828-4830

[6] Electronic structure of FM/semiconductor/FM spin tunneling structures [J].

Butler, WH ;

Zhang, XG ;

Wang, XD ;

vanEk, J ;

MacLaren, JM .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :5518-5520

[7] Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gates [J].

Ciuti, C ;

McGuire, JP ;

Sham, LJ .

APPLIED PHYSICS LETTERS, 2002, 81 (25) :4781-4783

[8] Imaging spin flows in semiconductors subject to electric, magnetic, and strain fields [J].

Crooker, SA ;

Smith, DL .

PHYSICAL REVIEW LETTERS, 2005, 94 (23)

[9]

CYWINSKI L, CONDMAT0601642

[10] ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].

DATTA, S ;

DAS, B .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667

← 1 2 3 4 →