Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gates

被引：36

作者：

Ciuti, C ^{[1
]}

McGuire, JP ^{[1
]}

Sham, LJ ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 25期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1530737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is illustrated by the proposal of a device configuration with two neighboring ferromagnetic gates which produces a magnetoresistance effect on the channel current generated by nonmagnetic source and drain contacts. Specific results are shown for a silicon inversion layer with iron gates. The gate leakage current is found to be beneficial to the spin effects. (C) 2002 American Institute of Physics.

引用

页码：4781 / 4783

页数：3

共 13 条

[1] Upper bound for the magnetic proximity effect extracted from Brillouin light scattering -: art. no. 104432 [J].

Åkerman, JJ ;

Guedes, I ;

Leighton, C ;

Grimsditch, M ;

Schuller, IK .

PHYSICAL REVIEW B, 2002, 65 (10) :1044321-1044324

[2] Direct extraction of the electron tunneling effective mass in ultrathin SiO2 [J].

Brar, B ;

Wilk, GD ;

Seabaugh, AC .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2728-2730

[3]

BYCHKOV YA, 1984, JETP LETT+, V39, P78

[4]

Ciuti C, 2002, PHYS REV LETT, V89, DOI 10.1103/PhysRevLetL89.156601

[5] ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].

DATTA, S ;

DAS, B .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667

[6] Spontaneous spin coherence in n-GaAs produced by ferromagnetic proximity polarization -: art. no. 121202 [J].

Epstein, RJ ;

Malajovich, I ;

Kawakami, RK ;

Chye, Y ;

Hanson, M ;

Petroff, PM ;

Gossard, AC ;

Awschalom, DD .

PHYSICAL REVIEW B, 2002, 65 (12) :1212021-1212024

[7] Spin dependence of the inelastic electron mean free path in Fe and Ni: Explicit calculations and implications [J].

Hong, JS ;

Mills, DL .

PHYSICAL REVIEW B, 2000, 62 (09) :5589-5600

[8] Ferromagnetic imprinting of nuclear spins in semiconductors [J].

Kawakami, RK ;

Kato, Y ;

Hanson, M ;

Malajovich, I ;

Stephens, JM ;

Johnston-Halperin, E ;

Salis, G ;

Gossard, AC ;

Awschalom, DD .

SCIENCE, 2001, 294 (5540) :131-134

[9] Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's [J].

Lo, SH ;

Buchanan, DA ;

Taur, Y ;

Wang, W .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (05) :209-211

[10]

Nitta J, 1997, PHYS REV LETT, V78, P1335, DOI 10.1103/PhysRevLett.78.1335

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