A new synthesis reaction of Ti3SiC2 through pulse discharge sintering Ti/SiC/TiC powder

被引：86

作者：

Zhang, ZF ^{[1
]}

Sun, ZM ^{[1
]}

Hashimoto, H ^{[1
]}

Abe, T ^{[1
]}

机构：

[1] Natl inst Adv Ind Sci & Technol, AIST Tohoku, Miyagino Ku, Sendai, Miyagi 9838551, Japan

来源：

SCRIPTA MATERIALIA | 2001年 / 45卷 / 12期

基金：

日本科学技术振兴机构;

关键词：

Ti3SiC2; pulse discharge sintering; synthesis; microstructure;

D O I：

10.1016/S1359-6462(01)01184-8

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ti3SiC2 was synthesized by pulse discharge sintering 4Ti/2SiC/TiC mixture powder in a temperature range of 1250-1450 degreesC. The purity of Ti3SiC2 was improved to 92 vol% at a sintering temperature of 1350 degreesC. The microstructure in the synthesized samples was controlled to be fine, coarse and duplex grains, depending on the sintering temperature and time. (C) 2001 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

引用

页码：1461 / 1467

页数：7

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