Thermal properties of Ti3SiC2

被引:329
作者
Barsoum, MW [1 ]
El-Raghy, T
Rawn, CJ
Porter, WD
Wang, H
Payzant, EA
Hubbard, CR
机构
[1] Drexel Univ, Dept Mat Engn, Philadelphia, PA 19104 USA
[2] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
基金
美国国家科学基金会;
关键词
thermal conductivity; thermal expansion; high temperature neutron diffraction;
D O I
10.1016/S0022-3697(98)00313-8
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The thermal properties of polycrystalline Ti3SiC2 in the 25 degrees C-1000 degrees C temperature range determined by Rietveld refinement of high temperature neutron diffraction data, show that at all temperatures, the amplitudes of vibration of the Si atoms are higher than those of the Ti and C atoms. Up to 700 degrees C, the vibrations of the Si atoms are quite isotropic but the vibrations of the other atoms are greater along the c-than along the a-axis. The amplitudes of vibration of the Ti atoms adjacent to the Si atoms are higher and more anisotropic than for the other Ti atom sandwiched between the C-layers. Good agreement is obtained between the bulk thermal expansion coefficients measured by dilatometry, 9.1(+/-0.2) x 10(-6)degrees C-1, and the values from the neutron diffraction results, 8.9(+/-0.1) x 10(-6)degrees C-1. The thermal expansion coefficients along the a-and c-axes are, respectively, 8.6(+/-0.1) x 10(-6)degrees C-1 and 9.7(+/-0.1) x 10(-6)degrees C-1. The heat capacity is 110 J/mol K at ambient temperatures and extrapolates to approximate to 155 J/mol K at 1200 degrees C. The room temperature thermal conductivity is 37 W/m K and decreases linearly to 32 W/m K at 1200 degrees C. The thermal conductivity is dominated by delocalized electrons. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:429 / 439
页数:11
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