Indium doping of CdTe polycrystalline films prepared by co-sputtering of GdTe-In-Cd targets

Indium doped CdTe polycrystalline films were grown on Coming glass substrates at room temperature by co-sputtering from a CdTe-Cd-ln target. The elemental Cd and In were glued onto the CdTe target covering small areas. The electrical, structural, and optical properties were analyzed as a function of the concentration of both elements. It was found that when Cd and In are simultaneously incorporated, the electrical resistivity drops and the carrier concentration increases. In both cases the changes are of several orders of magnitude. From the results, we conclude that, using this deposition technique, n-type In doped CdTe polycrystalline films can be produced. (C) 1997 American Institute of Physics.