GRAIN-BOUNDARY PHENOMENA IN N-TYPE CDTE-FILMS GROWN BY HOT WALL VACUUM EVAPORATION

被引：28

作者：

HUBER, W

FAHRENBRUCH, AL

FORTMANN, C

BUBE, RH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 07期

关键词：

D O I：

10.1063/1.332532

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4038 / 4043

页数：6

共 10 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

BACCARANI, G ;

RICCO, B ;

SPADINI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570

[2] ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J].

CARD, HC ;

YANG, ES .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :397-402

[3] CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON. [J].

Cowher, M.E. ;

Sedgwick, T.O. .

1600, (119)

[4]

Kato H., 1963, JPN J APPL PHYS, V2, P250, DOI DOI 10.1143/JJAP.2.250

[5] CDTE THIN-FILMS GROWN BY HOT WALL EPITAXY [J].

LOPEZOTERO, A ;

HUBER, W .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :214-217

[6] HOT WALL EPITAXY [J].

LOPEZOTERO, A .

THIN SOLID FILMS, 1978, 49 (01) :3-57

[7]

NAKAMURA K, 1982, JAP J APPL PHYS, V21, P665

[8] GRAIN-BOUNDARY RECOMBINATION - THEORY AND EXPERIMENT IN SILICON [J].

SEAGER, CH .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :3960-3968

[9] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

SETO, JYW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5247-5254

[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P382

← 1 →