Hut clusters on Ge(001) surfaces studied by STM and synchrotron X-ray diffraction

被引：14

作者：

Nielsen, M ^{[1
]}

Smilgies, DM ^{[1
]}

Feidenhansl, R ^{[1
]}

Landemark, E ^{[1
]}

Falkenberg, G ^{[1
]}

Lottermoser, L ^{[1
]}

Seehofer, L ^{[1
]}

Johnson, RL ^{[1
]}

机构：

[1] UNIV HAMBURG,INST EXPTL PHYS 2,D-22761 HAMBURG,GERMANY

来源：

SURFACE SCIENCE | 1996年 / 352卷

关键词：

germanium; indium; scanning tunneling microscopy; stepped single crystal surfaces; surface structure; morphology; roughness; and topography;

D O I：

10.1016/0039-6028(95)01175-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nanoscale hut clusters formed on Ge(001) surfaces by depositing one monolayer of indium and annealing at temperatures between 350 and 500 degrees C were studied by scanning tunnelling microscopy and synchrotron X-ray diffraction. It was found that the hut clusters form regular arrays over the entire surface. The huts are aligned with the [100] directions of the bulk Ge crystal and bounded by {103} facets. A structural model is proposed in which the clusters consist of Ge atoms and the dangling bonds on the {103} facets are saturated by In atoms which thereby stabilize the structure.

引用

页码：430 / 434

页数：5

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