Tunable SrTiO3 varactors using parallel plate and interdigital structures

被引：15

作者：

Mueller, CH

Treece, RE

Rivkin, TV

Miranda, FA

Moutinho, HR

SwartzlanderFranz, A

Dalberth, M

Rogers, CT

机构：

[1] NASA,LEWIS RES CTR,CLEVELAND,OH 44135

[2] NATL RENEWABLE ENERGY LAB,GOLDEN,CO 80401

[3] UNIV COLORADO,BOULDER,CO 80309

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1997年 / 7卷 / 02期

关键词：

D O I：

10.1109/77.622151

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dielectric properties of SrTiO3 (STO)/YBCO and STO films deposited on LaAlO3 substrates were evaluated, for potential varactor applications wherein the capacitance is altered via a de voltage applied across the STO film. The optimal growth temperature for the STO films in the STO/YBCO structures was 800 degrees C; higher temperatures resulted in interfacial degradation and poor film quality, and lower temperatures resulted in films with lower dielectric constants (epsilon(r)) and tunabilities. Interdigital varactors comprised of STO films deposited directly on LaAlO3 displayed higher tunabilities and significantly lower losses.

引用

收藏

页码：3512 / 3515

页数：4

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