Effects of moisture on Fowler-Nordheim characterization of thin silicon-oxide films

被引：5

作者：

Peterson, CA ^{[1
]}

Workman, RK

Sarid, D

Vermeire, B

Parks, HG

Adderton, D

Maivald, P

机构：

[1] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA

[2] Univ Arizona, Dept Elect & Comp Engn, Tucson, AZ 85721 USA

[3] Digital Instruments, Santa Barbara, CA 93117 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1999年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.581941

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A conducting-tip atomic force microscope was used as a Fowler-Nordheim characterization tool of thin silicon oxides. The system was operated under a controlled environment using novel cantilevers fabricated from platinum/iridium wire and nickel foil. With this tool, humidity-dependent field-induced oxidation of the samples and variations in the tunneling current due to uneven water layer coverage were investigated. It is shown that baking the samples and characterizing them under a dry environment alleviates problems arising from the humid environment. (C) 1999 American Vacuum Society. [S0734-2101(99)05705-X].

引用

页码：2753 / 2758

页数：6

共 26 条

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