Single-electron transistors made by chemical patterning of silicon dioxide substrates and selective deposition of gold nanoparticles

被引：38

作者：

Coskun, Ulas C. ^{[1
]}

Mebrahtu, Henok ^{[1
]}

Huang, Paul B. ^{[1
]}

Huang, Jeremy ^{[1
]}

Sebba, David ^{[1
]}

Biasco, Adriana ^{[1
,2
,3
,4
]}

Makarovski, Alex ^{[1
]}

Lazarides, Anne ^{[2
]}

LaBean, Thom H. ^{[3
,4
]}

Finkelstein, Gleb ^{[1
]}

机构：

[1] Duke Univ, Dept Phys, Durham, NC 27708 USA

[2] Duke Univ, Dept Mech Engn & Mat Sci, Durham, NC 27708 USA

[3] Duke Univ, Dept Chem, Durham, NC 27708 USA

[4] Duke Univ, Dept Comp Sci, Durham, NC 27708 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2981705

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe a method to pattern SiO2 surfaces with colloidal gold nanoparticles by e-beam lithography and selective nanoparticle deposition. The simple technique allows us to deposit nanoparticles in continuous straight lines, just one nanoparticle wide and many nanoparticles long. We contact the prepositioned nanoparticles with metal leads to form single electron transistors. The Coulomb blockade pattern surprisingly does not show the parasitic "offset charges" at low temperatures, indicating relatively little surface contamination. (C) 2008 American Institute of Physics.

引用

页数：3

共 19 条

[1] An approach to transport measurements of electronic molecules [J].