Fabrication of nanoscale gaps in integrated circuits

被引:57
作者
Krahne, R [1 ]
Yacoby, A
Shtrikman, H
Bar-Joseph, I
Dadosh, T
Sperling, J
机构
[1] Weizmann Inst Sci, Dept Condensed Matter Phys, IL-76100 Rehovot, Israel
[2] Weizmann Inst Sci, Dept Organ Chem, IL-76100 Rehovot, Israel
关键词
D O I
10.1063/1.1495080
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nanosize objects such as metal clusters present an ideal system for the study of quantum phenomena and for the construction of practical quantum devices. Integrating these small objects in a macroscopic circuit is, however, a difficult task. So far, nanoparticles have been contacted and addressed by highly sophisticated techniques not suitable for large-scale integration in macroscopic circuits. We present an optical lithography method that allows for the fabrication of a network of electrodes separated by gaps of controlled nanometer size. The main idea is to control the gap size with subnanometer precision using a structure grown by molecular-beam epitaxy. (C) 2002 American Institute of Physics.
引用
收藏
页码:730 / 732
页数:3
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