SINGLE-ELECTRON TUNNELING COEXISTING WITH THE BARRIER SUPPRESSION

被引：52

作者：

KOROTKOV, AN

NAZAROV, YV

机构：

[1] Division of Microelectronics, Institute of Nuclear Physics, Moscow State University, Moscow

来源：

PHYSICA B | 1991年 / 173卷 / 03期

关键词：

D O I：

10.1016/0921-4526(91)90083-Q

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have investigated the charge transport properties of the single-electron transistor in the case of interest when the charging energy of the device is comparable with the characteristic energy of the tunnel barrier suppression. One encounters the problem handling with the artificial tunnel barriers. A new type of the periodic peculiarities on the I-V curve originated from charging effects is predicted and considered in detail.

引用

页码：217 / 222

页数：6

共 14 条

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