Insight into the Role of Oxygen Diffusion in the Sensing Mechanisms of SnO2 Nanowires

被引：91

作者：

Hernandez-Ramirez, Francisco ^{[1
,2
]}

Prades, Joan Daniel ^{[1
]}

Tarancon, Albert ^{[1
]}

Barth, Sven ^{[3
]}

Casals, Olga ^{[1
]}

Jimenez-Diaz, Roman ^{[1
]}

Pellicer, Eva ^{[1
]}

Rodriguez, Jordi ^{[1
]}

Morante, Joan Ramon ^{[1
]}

Juli, Miguel Angel ^{[1
,2
]}

Mathur, Sanjay ^{[3
,4
]}

Romano-Rodriguez, Albert ^{[1
]}

机构：

[1] Univ Barcelona, Dept Elect, EME Xa RMAE IN2UB, E-08028 Barcelona, Spain

[2] NTEC106 SL, Lhospitalet De Llobregat 08903, Spain

[3] Leibniz Inst New Mat, Dept Nanocrystalline Mat & Thin Film Syst, D-66123 Saarbrucken, Germany

[4] Univ Cologne, Inst Inorgan Chem, D-97074 Wurzburg, Germany

来源：

ADVANCED FUNCTIONAL MATERIALS | 2008年 / 18卷 / 19期

关键词：

D O I：

10.1002/adfm.200701191

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The role of oxygen diffusion in the response of individual SnO2 nanowires to this gas is studied. Different oxygen partial pressures lead to strong changes of their electrical resistance, even at room temperature. Since surface models fail to explain the experimentally observed long-term resistance transients, it is necessary to make a description of the interaction mechanisms between oxygen species and SnO2 nanowires by taking ion diffusion into account. Our model correctly describes the experimentally measured dependence of the nanowire resistance with oxygen partial pressure, and it can be applied to the characterization of other metal oxide materials.

引用

页码：2990 / 2994

页数：5

共 43 条

[1] OXYGEN VACANCY DIFFUSION IN SNO2 THIN-FILMS [J].