Ultra-short laser ablation of metals and semiconductors: evidence of ultra-fast Coulomb explosion

被引:69
作者
Dachraoui, H [1 ]
Husinsky, W [1 ]
Betz, G [1 ]
机构
[1] Vienna Univ Technol, Inst Allgemeine Phys, A-1040 Vienna, Austria
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2006年 / 83卷 / 02期
关键词
D O I
10.1007/s00339-006-3499-y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied ultra-fast laser ablation of Si and a metal via the neutral and ion yield, the energy distribution of emitted neutrals and the charge distribution as a function of the laser pulse width. Two processes, one leading to the ejection of fast (3-7 eV), the other to slow thermal particles, can be identified. The origin of the first process can be correlated with laser pulse widths (or pump-probe delays) and processes on a time scale below 100 fs. Results for Si confirm recent findings for Coulomb explosion (CE) and we show for the first time that CE exists as a mechanism of material removal from metals for ultra-short laser pulses.
引用
收藏
页码:333 / 336
页数:4
相关论文
共 25 条
[1]   Thermal and nonthermal ion emission during high-fluence femtosecond laser ablation of metallic targets [J].
Amoruso, S ;
Wang, X ;
Altucci, C ;
de Lisio, C ;
Armenante, M ;
Bruzzese, R ;
Velotta, R .
APPLIED PHYSICS LETTERS, 2000, 77 (23) :3728-3730
[2]   Control of chemical reactions by feedback-optimized phase-shaped femtosecond laser pulses [J].
Assion, A ;
Baumert, T ;
Bergt, M ;
Brixner, T ;
Kiefer, B ;
Seyfried, V ;
Strehle, M ;
Gerber, G .
SCIENCE, 1998, 282 (5390) :919-922
[3]  
BENNEMANN KH, 2004, J PHYS CONDENS MATT, V16, P1056
[4]   Model description of surface charging during ultra-fast pulsed laser ablation of materials [J].
Bulgakova, NM ;
Stoian, R ;
Rosenfeld, A ;
Campbell, EEB ;
Hertel, IV .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 79 (4-6) :1153-1155
[5]   Femtosecond melting and ablation of semiconductors studied with time of flight mass spectroscopy [J].
Cavalleri, A ;
Sokolowski-Tinten, K ;
Bialkowski, J ;
Schreiner, M ;
von der Linde, D .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3301-3309
[6]   Nanoscale modification of silicon surfaces via Coulomb explosion [J].
Cheng, HP ;
Gillaspy, JD .
PHYSICAL REVIEW B, 1997, 55 (04) :2628-2636
[7]  
DACHRAOUI H, UNPUB APL
[8]   DIRECT MEASUREMENT OF NONEQUILIBRIUM ELECTRON-ENERGY DISTRIBUTIONS IN SUBPICOSECOND LASER-HEATED GOLD-FILMS [J].
FANN, WS ;
STORZ, R ;
TOM, HWK ;
BOKOR, J .
PHYSICAL REVIEW LETTERS, 1992, 68 (18) :2834-2837
[9]   Energy of neutral atoms ejected during ultra short laser ablation of metals [J].
Husinsky, W ;
Dachraoui, H ;
Matei, C ;
Betz, G .
HIGH-POWER LASER ABLATION V, PTS 1 AND 2, 2004, 5448 :1165-1170
[10]   Laser-induced electronic desorption of Si atoms from Si(111)-(7x7) [J].
Kanasaki, J ;
Tanimura, K .
PHYSICAL REVIEW B, 2002, 66 (12) :1-5