Laser-induced electronic desorption of Si atoms from Si(111)-(7x7)

被引：16

作者：

Kanasaki, J

Tanimura, K

机构：

[1] Osaka City Univ, Dept Intelligent Mat Engn, Osaka 5588585, Japan

[2] Osaka Univ, Inst Sci & Ind Res, Osaka 6650048, Japan

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.66.125320

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Desorption of Si atoms from Si(111)-(7x7) induced by femtosecond laser excitation has been studied by means of resonance ionization spectroscopy. The desorption yield shows a strong superlinear dependence on the excitation intensity, similar to the case of nanosecond laser excitation, however, femtosecond excitation enhances the yield strongly. The mechanism of Si-atom desorption from this surface is discussed based on these results.

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页码：1 / 5

页数：5

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