Site-sensitive yield of atomic emission induced by laser irradiation on Si(111)-7x7 surface

被引：19

作者：

Ishikawa, K

Kanasaki, J

Tanimura, K

Nakai, Y

机构：

[1] Department of Physics, Nagoya University, Nagoya 464-01, Furocho, Chikusaku

[2] Department of Electrical Engineering, Daido Institute of Technology, Nagoya 457, 2-21 Daidocho, Minamiku

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 98卷 / 10期

关键词：

semiconductors; surfaces and interfaces; laser processing; scanning tunneling microscopy;

D O I：

10.1016/0038-1098(96)80018-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The atomic structure of the Si(111)-7x7 surface after irradiation of 2.48 eV laser pulses has been studied using scanning tunneling microscopy. In the range of fluence at which no indication of melting Is observed, the examination of more than 300 unit cells on irradiated surface has revealed that the number of vacancies formed at the center-adatom site is much larger than that at the corner-adatom site, showing the strong site-dependent yield of laser-induced atomic emission. Copyright (C) 1996 Published by Elsevier Science Ltd

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页码：913 / 916

页数：4

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