ATOM-RESOLVED SURFACE-CHEMISTRY STUDIED BY SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY

被引:286
作者
AVOURIS, P
WOLKOW, R
机构
来源
PHYSICAL REVIEW B | 1989年 / 39卷 / 08期
关键词
D O I
10.1103/PhysRevB.39.5091
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5091 / 5100
页数:10
相关论文
共 34 条
[1]   THE REACTION OF SI(100) 2X1 WITH NO AND NH3 - THE ROLE OF SURFACE DANGLING BONDS [J].
AVOURIS, P ;
BOZSO, F ;
HAMERS, RJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1387-1392
[2]  
AVOURIS P, 1988, MATER RES S P, V105, P35
[3]  
AVOURIS P, UNPUB
[4]   REAL-SPACE OBSERVATION OF SURFACE-STATES ON SI(111)7X7 WITH THE TUNNELING MICROSCOPE [J].
BECKER, RS ;
GOLOVCHENKO, JA ;
HAMANN, DR ;
SWARTZENTRUBER, BS .
PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2032-2034
[5]  
BEHM RJ, 1986, CHEM PHYSICS SOLID S, V6
[6]   7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J].
BINNIG, G ;
ROHRER, H ;
GERBER, C ;
WEIBEL, E .
PHYSICAL REVIEW LETTERS, 1983, 50 (02) :120-123
[7]   REACTION OF SI(100) WITH NH3 - RATE-LIMITING STEPS AND REACTIVITY ENHANCEMENT VIA ELECTRONIC EXCITATION [J].
BOZSO, F ;
AVOURIS, P .
PHYSICAL REVIEW LETTERS, 1986, 57 (09) :1185-1188
[8]   THERMAL AND ELECTRON-BEAM-INDUCED REACTION OF DISILANE ON SI(100)-(2X1) [J].
BOZSO, F ;
AVOURIS, P .
PHYSICAL REVIEW B, 1988, 38 (06) :3943-3947
[9]  
DAUN W, 1987, PHYS REV LETT, V59, P1593
[10]   TUNNELING SPECTROSCOPY OF THE SI(111)2X1 SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA ;
FEIN, AP .
SURFACE SCIENCE, 1987, 181 (1-2) :295-306