LOCALIZED EXCITONS AND BREAKING OF CHEMICAL-BONDS AT III-V (110)SURFACES

被引:44
作者
PANKRATOV, O [1 ]
SCHEFFLER, M [1 ]
机构
[1] MAX PLANCK GESELL,FRITZ HABER INST,FARADAYWEG 4-6,D-14195 BERLIN,GERMANY
关键词
D O I
10.1103/PhysRevLett.75.701
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Electron-hole excitations in the surface bands of GaAs(110) are analyzed using constrained density-functional theory calculations. The results reveal formation of autolocalized Frenkel-type excitons which merge in microscopic ''droplets'' due to attraction initiated by exciton-induced unrelaxation of the surface. A substantial weakening of the bonding of the topmost Ga atom is found in such an ''exciton droplet.'' This finding suggests a microscopic mechanism of laser-induced emission of the neutral Ga atoms from GaAs and GaP (110) surfaces.
引用
收藏
页码:701 / 704
页数:4
相关论文
共 21 条
[1]   CALCULATED ATOMIC STRUCTURES AND ELECTRONIC-PROPERTIES OF GAP, INP, GAAS, AND INAS (110) SURFACES [J].
ALVES, JLA ;
HEBENSTREIT, J ;
SCHEFFLER, M .
PHYSICAL REVIEW B, 1991, 44 (12) :6188-6198
[2]   UNIFIED APPROACH FOR MOLECULAR-DYNAMICS AND DENSITY-FUNCTIONAL THEORY [J].
CAR, R ;
PARRINELLO, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (22) :2471-2474
[3]   GROUND-STATES OF CONSTRAINED SYSTEMS - APPLICATION TO CERIUM IMPURITIES [J].
DEDERICHS, PH ;
BLUGEL, S ;
ZELLER, R ;
AKAI, H .
PHYSICAL REVIEW LETTERS, 1984, 53 (26) :2512-2515
[4]   SEMICONDUCTOR-TO-METAL TRANSITION IN AN ULTRATHIN INTERFACE - CS/GAAS(110) [J].
DINARDO, NJ ;
WONG, TM ;
PLUMMER, EW .
PHYSICAL REVIEW LETTERS, 1990, 65 (17) :2177-2180
[5]   SELF-ENERGY OPERATORS AND EXCHANGE-CORRELATION POTENTIALS IN SEMICONDUCTORS [J].
GODBY, RW ;
SCHLUTER, M ;
SHAM, LJ .
PHYSICAL REVIEW B, 1988, 37 (17) :10159-10175
[6]   SURFACE PHONONS ON GAAS(110) MEASURED BY INELASTIC HELIUM ATOM SCATTERING [J].
HARTEN, U ;
TOENNIES, JP .
EUROPHYSICS LETTERS, 1987, 4 (07) :833-838
[7]   LASER-INDUCED ELECTRONIC PROCESSES ON GAP (110) SURFACES - PARTICLE-EMISSION AND ABLATION INITIATED BY DEFECTS [J].
HATTORI, K ;
OKANO, A ;
NAKAI, Y ;
ITOH, N .
PHYSICAL REVIEW B, 1992, 45 (15) :8424-8436
[8]   SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATIONS FOR SODIUM ADSORPTION ON GAAS(110) [J].
HEBENSTREIT, J ;
SCHEFFLER, M .
PHYSICAL REVIEW B, 1992, 46 (16) :10134-10145
[9]   DYNAMIC INTERACTION OF SURFACE ELECTRON-HOLE PAIRS WITH SURFACE-DEFECTS - SURFACE SPECTROSCOPY MONITORED BY PARTICLE EMISSIONS [J].
KANASAKI, J ;
OKANO, A ;
ISHIKAWA, K ;
NAKAI, Y ;
ITOH, N .
PHYSICAL REVIEW LETTERS, 1993, 70 (16) :2495-2498
[10]   RELAXATION AND BOND BREAKING AT DEFECT SITES ON GAP (110) SURFACES BY PHONON-ASSISTED MULTIHOLE LOCALIZATION [J].
KHOO, GS ;
ONG, CK ;
ITOH, N .
PHYSICAL REVIEW B, 1993, 47 (04) :2031-2037