LOCALIZED EXCITONS AND BREAKING OF CHEMICAL-BONDS AT III-V (110)SURFACES

被引:44
作者
PANKRATOV, O [1 ]
SCHEFFLER, M [1 ]
机构
[1] MAX PLANCK GESELL,FRITZ HABER INST,FARADAYWEG 4-6,D-14195 BERLIN,GERMANY
关键词
D O I
10.1103/PhysRevLett.75.701
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Electron-hole excitations in the surface bands of GaAs(110) are analyzed using constrained density-functional theory calculations. The results reveal formation of autolocalized Frenkel-type excitons which merge in microscopic ''droplets'' due to attraction initiated by exciton-induced unrelaxation of the surface. A substantial weakening of the bonding of the topmost Ga atom is found in such an ''exciton droplet.'' This finding suggests a microscopic mechanism of laser-induced emission of the neutral Ga atoms from GaAs and GaP (110) surfaces.
引用
收藏
页码:701 / 704
页数:4
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