GEOMETRIC AND ELECTRONIC-PROPERTIES OF CS STRUCTURES ON III-V (110) SURFACES - FROM 1D AND 2D INSULATORS TO 3D METALS

被引：194

作者：

WHITMAN, LJ

STROSCIO, JA

DRAGOSET, RA

CELOTTA, RJ

机构：

[1] Electron and Optical Physics Division, National Institute of Standards Technology, Gaithersburg

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.66.1338

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the structural and electronic properties of Cs adsorbed on room-temperature GaAs and InSb (110) surfaces as observed with scanning tunneling microscopy. Cs initially forms long one-dimensional (1D) zigzag chains on both surfaces. Additional Cs adsorption on GaAs(110) results in the formation of a 2D overlayer consisting of five-atom Cs polygons arranged in a c(4 x 4) superlattice. The tunneling gap measured over these insulating structures narrows with the transition from 1D to 2D, with metallic characteristics observed following saturation with a second Cs overlayer.

引用

页码：1338 / 1341

页数：4

共 20 条

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