SURFACE POLARONS AND BIPOLARONS AT GAAS(110) WITH ADSORBED ALKALI-METALS

被引:8
作者
PANKRATOV, O
SCHEFFLER, M
机构
[1] Fritz-Haber-Institut der Max-Planck-Gesellschaft, D-14195 Berlin Dahlem
关键词
D O I
10.1016/0039-6028(94)91531-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We performed density-functional theory calculations for Na or K adsorbates on GaAs(110). The alkali-metal adatoms are found to donate their valence electrons into Ga dangling bonds. This results in a lattice relaxation around the occupied Ga orbital with a very strong polaron shift of about 1 eV. Moreover, it is predicted that two polarons can merge, forming a surface bipolaron. The polaron as well as the bipolaron states are localized, which explains the observed non-metallic character of the surface. The formation of the localized bipolaron can be also described in terms of a ''negative-U'' behavior of the Ga dangling orbital. We discuss how the formation of bipolarons may affect STM images and surface core-level photoemission spectra.
引用
收藏
页码:1001 / 1006
页数:6
相关论文
共 21 条
[1]   NEGATIVE-U CHARACTER OF THE ADSORPTION ON SEMICONDUCTOR SURFACES - APPLICATION TO METALS ON GAAS(110) [J].
ALLAN, G ;
LANNOO, M .
PHYSICAL REVIEW LETTERS, 1991, 66 (09) :1209-1211
[2]   CALCULATED ATOMIC STRUCTURES AND ELECTRONIC-PROPERTIES OF GAP, INP, GAAS, AND INAS (110) SURFACES [J].
ALVES, JLA ;
HEBENSTREIT, J ;
SCHEFFLER, M .
PHYSICAL REVIEW B, 1991, 44 (12) :6188-6198
[3]   MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].
ANDERSON, PW .
PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955
[4]   ADSORPTION OF NA ON THE GAAS(110) SURFACE STUDIED BY THE FIELD-ION-SCANNING-TUNNELING-MICROSCOPY [J].
BAI, C ;
HASHIZUME, T ;
JEON, DR ;
SAKURAI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (8A) :L1117-L1120
[5]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[6]   ELECTRON-PHONON COUPLING AND SURFACE-STATE POLARONS ON SI(111)2X1 [J].
CHEN, CD ;
SELLONI, A ;
TOSATTI, E .
PHYSICAL REVIEW B, 1984, 30 (12) :7067-7091
[7]   SEMICONDUCTOR-TO-METAL TRANSITION IN AN ULTRATHIN INTERFACE - CS/GAAS(110) [J].
DINARDO, NJ ;
WONG, TM ;
PLUMMER, EW .
PHYSICAL REVIEW LETTERS, 1990, 65 (17) :2177-2180
[8]   STRUCTURE OF CS ON GAAS(110) AS DETERMINED BY SCANNING TUNNELING MICROSCOPY [J].
FIRST, PN ;
DRAGOSET, RA ;
STROSCIO, JA ;
CELOTTA, RJ ;
FEENSTRA, RM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04) :2868-2872
[9]   ELECTRONIC-PROPERTIES OF NA OVERLAYERS ON THE GAAS(110) SURFACE [J].
FONG, CY ;
YANG, LH ;
BATRA, IP .
PHYSICAL REVIEW B, 1989, 40 (09) :6120-6123
[10]   ANALYSIS OF SEPARABLE POTENTIALS [J].
GONZE, X ;
STUMPF, R ;
SCHEFFLER, M .
PHYSICAL REVIEW B, 1991, 44 (16) :8503-8513