SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATIONS FOR SODIUM ADSORPTION ON GAAS(110)

被引:48
作者
HEBENSTREIT, J [1 ]
SCHEFFLER, M [1 ]
机构
[1] MAX PLANCK GESELL, FRITZ HABER INST, W-1000 BERLIN 33, GERMANY
来源
PHYSICAL REVIEW B | 1992年 / 46卷 / 16期
关键词
D O I
10.1103/PhysRevB.46.10134
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report self-consistent electronic structure, total-energy, and force calculations based on the density-functional theory for the Na adsorption on GaAs(110). In particular we studied three different coverages: THETA = 1/4, 1/2, and 1 (THETA = 1 means one adatom per substrate surface atom). We find that the Na core electrons play an important role for the exchange-correlation interaction and we therefore carry the atomic core-electron density of sodium along with the self-consistent calculations. Tests with our formulation of this core-valence exchange-correlation interaction are presented for the free sodium atom, the NaCl crystal, and Na metal. By the sodium adsorption on GaAs(110) the atomic and electronic structure of the substrate is locally changed, depending on the coverage. For THETA = 1/4 and 1/2 the calculations give that the highest occupied Kohn-Sham band is rather flat and only partially occupied. We show that the Hubbard correlation energy of this band is larger than the bandwidth. We therefore conclude that the system should be described in a Hubbard picture rather than in a Bloch picture. As a consequence, it should be nonmetallic. The calculated values of the Schottky-barrier height and of the variation of photothreshold as a function of coverage are in good agreement with experimental data. From a detailed analysis of the surface electronic structure we explain the different Schottky-barrier behavior for p-type and n-type substrates.
引用
收藏
页码:10134 / 10145
页数:12
相关论文
共 42 条
  • [1] CALCULATED ATOMIC STRUCTURES AND ELECTRONIC-PROPERTIES OF GAP, INP, GAAS, AND INAS (110) SURFACES
    ALVES, JLA
    HEBENSTREIT, J
    SCHEFFLER, M
    [J]. PHYSICAL REVIEW B, 1991, 44 (12): : 6188 - 6198
  • [2] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU
    BACHELET, GB
    HAMANN, DR
    SCHLUTER, M
    [J]. PHYSICAL REVIEW B, 1982, 26 (08): : 4199 - 4228
  • [3] BAND OFFSETS IN LATTICE-MATCHED HETEROJUNCTIONS - A MODEL AND 1ST-PRINCIPLES CALCULATIONS FOR GAAS/ALAS
    BALDERESCHI, A
    BARONI, S
    RESTA, R
    [J]. PHYSICAL REVIEW LETTERS, 1988, 61 (06) : 734 - 737
  • [4] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
    Brillson, L. J.
    [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
  • [5] METALLIZATION AND FERMI-LEVEL MOVEMENT AT THE CS/GAAS(110) INTERFACES
    CAO, R
    MIYANO, K
    KENDELEWICZ, T
    LINDAU, I
    SPICER, WE
    [J]. PHYSICAL REVIEW B, 1989, 39 (17): : 12655 - 12663
  • [6] UNIFIED APPROACH FOR MOLECULAR-DYNAMICS AND DENSITY-FUNCTIONAL THEORY
    CAR, R
    PARRINELLO, M
    [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (22) : 2471 - 2474
  • [7] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD
    CEPERLEY, DM
    ALDER, BJ
    [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (07) : 566 - 569
  • [8] SEMICONDUCTOR-TO-METAL TRANSITION IN AN ULTRATHIN INTERFACE - CS/GAAS(110)
    DINARDO, NJ
    WONG, TM
    PLUMMER, EW
    [J]. PHYSICAL REVIEW LETTERS, 1990, 65 (17) : 2177 - 2180
  • [9] STRUCTURE OF CS ON GAAS(110) AS DETERMINED BY SCANNING TUNNELING MICROSCOPY
    FIRST, PN
    DRAGOSET, RA
    STROSCIO, JA
    CELOTTA, RJ
    FEENSTRA, RM
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04): : 2868 - 2872
  • [10] ELECTRONIC-PROPERTIES OF NA OVERLAYERS ON THE GAAS(110) SURFACE
    FONG, CY
    YANG, LH
    BATRA, IP
    [J]. PHYSICAL REVIEW B, 1989, 40 (09): : 6120 - 6123