METALLIZATION AND FERMI-LEVEL MOVEMENT AT THE CS/GAAS(110) INTERFACES

[1] Ashcroft N. W., 1976, SOLID STATE PHYS, P18

[2] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 998 - 1002

[3] LACK OF TEMPERATURE-DEPENDENCE OF FERMI LEVEL PINNING AT THE CU/INP(110) INTERFACE - A COMPARISON WITH CU/GAAS AND OTHER SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1988, 53 (03) : 210 - 212

[4] CAO R, IN PRESS J VAC SCI A

[5] CAO R, 1988, P SOC PHOTOOPT INSTR, V946, P219

[6] CAO R, UNPUB

[7] UNUSUAL LOW-TEMPERATURE BEHAVIOR OF FERMI LEVEL MOVEMENT AT THE SB/GAAS INTERFACE [J]. APPLIED PHYSICS LETTERS, 1988, 53 (02) : 137 - 139

[8] ADSORPTION OF CESIUM ON GALLIUM-ARSENIDE (110) [J]. SURFACE SCIENCE, 1977, 65 (02) : 668 - 686

[9] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656

[10] ON THE FORMATION OF SEMICONDUCTOR INTERFACES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (02): : 145 - 175

[1] Ashcroft N. W., 1976, SOLID STATE PHYS, P18

[2] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 998 - 1002

[3] LACK OF TEMPERATURE-DEPENDENCE OF FERMI LEVEL PINNING AT THE CU/INP(110) INTERFACE - A COMPARISON WITH CU/GAAS AND OTHER SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1988, 53 (03) : 210 - 212

[4] CAO R, IN PRESS J VAC SCI A

[5] CAO R, 1988, P SOC PHOTOOPT INSTR, V946, P219

[6] CAO R, UNPUB

[7] UNUSUAL LOW-TEMPERATURE BEHAVIOR OF FERMI LEVEL MOVEMENT AT THE SB/GAAS INTERFACE [J]. APPLIED PHYSICS LETTERS, 1988, 53 (02) : 137 - 139

[8] ADSORPTION OF CESIUM ON GALLIUM-ARSENIDE (110) [J]. SURFACE SCIENCE, 1977, 65 (02) : 668 - 686

[9] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656

[10] ON THE FORMATION OF SEMICONDUCTOR INTERFACES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (02): : 145 - 175