PICOSECOND TIME-RESOLVED PHOTOEMISSION-STUDY OF THE INP(110) SURFACE

被引：75

作者：

HAIGHT, R ^{[1
]}

BOKOR, J ^{[1
]}

STARK, J ^{[1
]}

STORZ, RH ^{[1
]}

FREEMAN, RR ^{[1
]}

BUCKSBAUM, PH ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1985年 / 54卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.54.1302

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：1302 / 1305

页数：4

相关论文

共 14 条

[1] SURFACE-STATES AND SURFACE RESONANCES IN INP, INAS, AND INSB
BERES, RP
ALLEN, RE
DOW, JD
[J]. PHYSICAL REVIEW B, 1982, 26 (10): : 5702 - 5705
[2] BOKER J, 1983, OPT LETT, V8, P21
[3] BOKER J, 1984, LASER TECHNIQUES EXT
[4] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
STERN, F
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643
[5] ELECTRONIC STATES ON THE RELAXED (110) SURFACE OF GAAS
CHELIKOWSKY, JR
COHEN, ML
[J]. SOLID STATE COMMUNICATIONS, 1979, 29 (03) : 267 - 271
[6] EBERHARDT W, 1980, PHYS REV B, V21, P5572, DOI 10.1103/PhysRevB.21.5572
[7] ELECTRONIC SURFACE PROPERTIES OF 3-5 SEMICONDUCTORS - EXCITONIC EFFECTS, BAND-BENDING EFFECTS, AND INTERACTIONS WITH AU AND O ADSORBATE LAYERS
GUDAT, W
EASTMAN, DE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 831 - 837
[8] AUGER RECOMBINATION IN DIRECT-GAP SEMICONDUCTORS - BAND-STRUCTURE EFFECTS
HAUG, A
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (21): : 4159 - 4172
[9] FINAL-STATE SYMMETRY AND POLARIZATION EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION SPECTROSCOPY
HERMANSON, J
[J]. SOLID STATE COMMUNICATIONS, 1977, 22 (01) : 9 - 11
[10] PLUMMER EW, 1982, ADV CHEM PHYSICS, V49