Laser-induced electronic desorption of Si atoms from Si(111)-(7x7)

被引:16
作者
Kanasaki, J
Tanimura, K
机构
[1] Osaka City Univ, Dept Intelligent Mat Engn, Osaka 5588585, Japan
[2] Osaka Univ, Inst Sci & Ind Res, Osaka 6650048, Japan
关键词
D O I
10.1103/PhysRevB.66.125320
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Desorption of Si atoms from Si(111)-(7x7) induced by femtosecond laser excitation has been studied by means of resonance ionization spectroscopy. The desorption yield shows a strong superlinear dependence on the excitation intensity, similar to the case of nanosecond laser excitation, however, femtosecond excitation enhances the yield strongly. The mechanism of Si-atom desorption from this surface is discussed based on these results.
引用
收藏
页码:1 / 5
页数:5
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