Ge growth on Si(001) studied by x-ray photoelectron spectroscopy peak shape analysis and atomic force microscopy

被引：14

作者：

Schleberger, M

Simonsen, AC

Tougaard, S

Hansen, JL

Larsen, AN

机构：

[1] ODENSE UNIV,INST FYS,DK-5230 ODENSE M,DENMARK

[2] AARHUS UNIV,INST FYS & ASTRON,DK-8000 AARHUS,DENMARK

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1997年 / 15卷 / 06期

关键词：

D O I：

10.1116/1.580900

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigated the nanostructure of Ge deposited on Si(001) at T=560 degrees C with x-ray photoelectron spectroscopy using peak shape analysis and with atomic force microscopy. Analyzing the Ge 2p as well as the Si KLL spectra, we find strong island growth. The Ge deposited is equal to a 14-monolayer-thick film. In agreement with the x-ray photoelectron spectroscopy results, the atomic force microscope pictures show strong island formation. About 50% of the Si surface is covered by Ge islands. The islands are distributed regularly and have an average height of 50 Angstrom. We find some variation in height ranging from similar or equal to 20 to similar or equal to 80 Angstrom. (C) 1997 American Vacuum Society. [S0734-2101(97)00806-3].

引用

页码：3032 / 3035

页数：4