Spin-polarized Zener tunneling in (Ga,Mn)As

被引:98
作者
Johnston-Halperin, E [1 ]
Lofgreen, D
Kawakami, RK
Young, DK
Coldren, L
Gossard, AC
Awschalom, DD
机构
[1] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[3] Univ Calif Santa Barbara, Dept Mat Sci, Santa Barbara, CA 93106 USA
来源
PHYSICAL REVIEW B | 2002年 / 65卷 / 04期
关键词
D O I
10.1103/PhysRevB.65.041306
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate spin-polarized inter-band tunneling through measurement of a (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to the conduction band of an adjacent n-GaAs layer. The resulting current is monitored by injection into a quantum well light emitting diode whose electroluminescence polarization is found to track the magnetization of the (Ga,Mn)As layer as a function of both temperature and magnetic field.
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页码:1 / 4
页数:4
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