Adsorption structure of formic acid on Si(100) studied by surface NEXAFS

被引：26

作者：

Ikeura-Sekiguchi, H

Sekiguchi, T

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[2] Japan Atom Energy Res Inst, Naka, Ibaraki 31911, Japan

来源：

SURFACE SCIENCE | 1999年 / 433卷

关键词：

chemisorption; formic acid; near edge X-ray absorption fine structure (NEXAFS); silicon; surface;

D O I：

10.1016/S0039-6028(99)00039-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The structure of the surface formate chemisorbed on Si(100) at 300 K was studied by near edge X-ray absorption fine structure (NEXAFS) at the carbon K-edge. By probing the incidence-angle-dependent NEXAFS spectra, it was determined that the CDO group bond of the surface formate is tilted away from the surface normal by an average angle of 21 +/- 2 degrees. This geometry is analogous to the dihedral angle (21 degrees) of the O=C-O-Si group of silyl formate in the gas phase. This finding indicates that the surface formate and the gas-phase silyl formate have similar steric structures. It could be expected that the electronic structure of the chemisorbed formate is also similar to that of the gas-phase silyl formate, (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：549 / 553

页数：5

共 30 条

[21] Enhanced photon stimulated ion-desorption yields from chemisorbed molecules through bond-selective core-electron excitation [J].