Dielectric relaxor and ferroelectric relaxor:: Bi-doped paraelectric SrTiO3

被引:138
作者
Ang, C [1 ]
Yu, Z [1 ]
机构
[1] Zhejiang Univ, Dept Mat Sci & Engn, Dept Phys, Hangzhou 310027, Peoples R China
关键词
D O I
10.1063/1.1428799
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this article, we report the evolution of the dielectric behavior from a dielectric relaxor to a ferroelectric relaxor with variation of Bi concentration in (Sr1-1.5xBix)TiO3 (0less than or equal toxless than or equal to0.2). In the doping range 0.0005less than or equal toxless than or equal to0.002, two dielectric modes A and B are induced. The temperature (T-m) where the permittivity maximum occurs for modes A and B is independent of Bi concentration and of dc electric fields. The complex permittivity of modes A and B follows the empirical Cole-Cole equation. The relaxation time for modes A and B follows the Arrhenius law. The dielectric possessing this type of dielectric behavior is named as a "dielectric relaxor." At xgreater than or equal to0.0033, an additional mode C appears, whose T-m increases with increasing Bi concentration. The complex permittivity for mode C does not follow the Cole-Cole equation. The relaxation time of mode C follows the Vogel-Fulcher law, indicating typical relaxor-ferroelectric behavior. In this work, we refer it to a "ferroelectric relaxor" mode. In the range of 0.0033less than or equal toxless than or equal to0.133, the coexistence of the dielectric-relaxor modes and the ferroelectric-relaxor mode is observed. In the samples doped with higher Bi concentration, modes A and B gradually merge into mode C, and only ferroelectric-relaxor behavior remains at xgreater than or equal to0.133. This system provides a composition-controlled example of evolution from a "dielectric relaxor" to a "ferroelectric relaxor." In addition, some controversial interpretations of the dielectric behavior of the Bi doped SrTiO3 solid solutions in the literature are discussed, and the polarization relaxation species of modes A and B are attributed to Bi ions. (C) 2002 American Institute of Physics.
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页码:1487 / 1494
页数:8
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