Dielectric relaxation and conduction in SrTiO3 thin films under dc bias

被引：24

作者：

Ang, C ^{[1
]}

Yu, Z ^{[1
]}

Cross, LE ^{[1
]}

Guo, RY ^{[1
]}

Bhalla, AS ^{[1
]}

机构：

[1] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 06期

关键词：

D O I：

10.1063/1.1389771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dielectric and conduction behavior of SrTiO3 thin films deposited on a SrTiO3 single-crystal substrate is studied. Without dc bias, an obvious dielectric "defect mode" in the dielectric loss is observed in the temperature range of similar to 100-200 K; however, no noticeable corresponding dielectric constant peak is observed. By applying a high dc bias (greater than or equal to 40 kV/cm), a dielectric constant peak with frequency dispersion appears in the same temperature range, the dielectric loss is increased, and simultaneously high dc conduction is observed. The induced dielectric constant peak is related to dc conduction and attributed to the coupling effect of the mobile carriers with the dielectric defect mode. (C) 2001 American Institute of Physics.

引用

页码：818 / 820

页数：3

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