Transistor performance of top rough surface of pentacene measured by laminated double insulated-gate supported on a poly(dimethylsiloxanes) base structure

被引：25

作者：

Ling, MM ^{[1
]}

Bao, ZN

Li, DW

机构：

[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 03期

关键词：

D O I：

10.1063/1.2166488

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication and electrical characterization of pentacene field-effect transistors with a laminated double insulated-gate using poly(dimethylsiloxanes) (PDMS) as their supporting structure. The ability of PDMS to conform to surfaces enables us to directly evaluate the device performance of the top rough surface of the pentacene active layer (the pentacene-air interface). The mobility measured for the top surface was only about 20% slightly lower than that of the bottom surface. Device stability under ambient conditions is evaluated. This device structure is useful for the characterization of electrical transport in both the top and bottom surface of a thin film simultaneously. (c) 2006 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 31 条

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[Anonymous], UNPUB

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