Optimum tunnel barrier in ferromagnetic-insulator-ferromagnetic tunneling structures

被引:153
作者
Moodera, JS
Gallagher, EF
Robinson, K
Nowak, J
机构
[1] Francis Bitter Magnet Laboratory, MIT, Cambridge
关键词
D O I
10.1063/1.118168
中图分类号
O59 [应用物理学];
学科分类号
摘要
Al2O3 tunnel barriers I, formed by the oxidization of Al metal of various thicknesses between two ferromagnetic (FM) films were investigated to understand the influence of overlayer metal Al on the junction magnetoresistance (JMR). The optimum thickness of Al was observed to lie in the range of 1-1.6 nm to achieve good JMR in FM-I-FM junctions. Additionally, such junctions can be used to study the magnetic proximity effect in ferromagnet/normal metal bilayer systems. (C) 1997 American Institute of Physics.
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页码:3050 / 3052
页数:3
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