Band gap and band alignment of strain reduced Si/Si1-x-yGexCy multiple quantum well structures obtained by photoluminescence measurements

被引：18

作者：

Hartmann, R ^{[1
]}

Gennser, U

Sigg, H

Grützmacher, D

Ensslin, K

机构：

[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

[2] ETH Zurich, CH-8093 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 09期

关键词：

D O I：

10.1063/1.122144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of strain compensation in Si/SiGeC multiple quantum wells (MQWs) is investigated. Photoluminescence measurements on strain-reduced Si/SiGeC layers indicate a type-I band alignment. Values for the conduction-band and valence-band offsets of nearly strain-free Si/SiGeC MQWs are presented. Variation of the strain in the pseudomorphic layers reveals a lowering of the gap energy for exactly strain-compensated SiGeC compared to compressive SiGeC. A model is developed which explains this energy behavior in terms of band offsets and confinement shifts. The band alignments of strain-reduced Si/SiGeC and Si/SiC are compared. (C) 1998 American Institute of Physics. [S0003-6951(98)00335-0].

引用

页码：1257 / 1259

页数：3

共 12 条

[1] Near-band-edge photoluminescence from pseudomorphic Si1-gamma C gamma/Si quantum well structures [J].