A novel method for the synthesis of sub-microcrystalline wurtzite-type InxGa1-xN powders

被引：32

作者：

García, R

Hirata, GA

Farías, MH

McKittrick, J

机构：

[1] Univ Nacl Autonoma Mexico, CCMC, CICESE, Prog Posgrado Fis & Mat, Ensenada 22860, Baja California, Mexico

[2] Univ Nacl Autonoma Mexico, Ctr Ciencias Mat Condensada, Ensenada 22860, Baja California, Mexico

[3] Univ Calif San Diego, Dept Mech & Aerosp Engn, La Jolla, CA 92093 USA

[4] Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 90卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

wurtzite-type; ammonium hexafluoroindium-gallate; microcrystalline; InxGa1-xN;

D O I：

10.1016/S0921-5107(01)00716-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel method to synthesize wurtzite-type gallium-indium nitride powders (InxGa1-xN, x = 0, 0.5, 1) with small particle size, high purity and high crystallinity has been developed. The method produces finely divided powders via the pyrolysis reaction of a complex salt (ammonium hexafluoroindium-gallate, (NH4)(3)InxGa1-xF6) in an ultrahigh purity ammonia flow inside of a quartz tubular reactor at relatively low temperature, 630 C. The conditions of the process avoid the formation of metallic indium, oxides or fluorides. Scanning electron microscopy and X-ray diffraction analysis performed on these sub-micron particles of InxGa1-xN show an hexagonal wurtzite-type structure, which is very similar to pure InN produced by the same technique. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：7 / 12

页数：6

共 6 条

[1]

Cullity B. D., 1978, Elements of X-ray Diffraction, P324

[2]

Edgar J.H, 1994, PROPERTIES GROUP 3 N, P30

[3] Organoindium azides: new precursors to indium nitride [J].