Organoindium azides: new precursors to indium nitride

The synthesis, properties and the molecular structure in the solid state of triazido(tripyridino)indium (1), the mixed coordination polymer {(CF3SO3)In[(CH2)(3)NMe2)](2)(mu-N-3)In[(CH2)(3)NMe2)](2)}(x), (2) and the polymeric monoazide {(N-3)In[(CH2)(3)NMe2)](2)} (3) are reported. Some aspects of the precursor chemistry of 1-3 related to the synthesis of InN thin films are discussed, with special emphasis on the aspect of the accessible chemical purity of the precursors. Compound 3 al:owed the growth of crystalline InN thin films at 300-450 degrees C in the absence of ammonia using the technique of organometallic chemical vapor deposition. (C) 1997 Elsevier Science B.V.