Fabrication of a nano-scale gap by selective chemical deposition

被引：12

作者：

Huang, L ^{[1
]}

Xu, L ^{[1
]}

Zhang, HQ ^{[1
]}

Gu, N ^{[1
]}

机构：

[1] Southeast Univ, Natl Lab Mol & Biomol Elect, Nanjing 210096, Peoples R China

来源：

CHEMICAL COMMUNICATIONS | 2002年 / 01期

关键词：

D O I：

10.1039/b109189c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An electrode nanogap of 45 nm has been prepared by a new method in which the initial gap of 1-2 mum obtained by conventional lithography was shortened by selective chemical deposition of copper onto the electrodes.

引用

页码：72 / 73

页数：2

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