Fabrication of nanometer size gaps in a metallic wire

被引：58

作者：

Lefebvre, J ^{[1
]}

Radosavljevic, M ^{[1
]}

Johnson, AT ^{[1
]}

机构：

[1] Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 25期

关键词：

D O I：

10.1063/1.126795

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a simple shadow mask method to fabricate electrodes with nanometer scale separation. Metal wires with gaps are made by incorporating multiwall carbon nanotubes or single-wall carbon nanotube (SWNT) bundles into a trilayer electron beam lithography process. The simple, highly controllable, and scaleable method has been used to make gaps with widths between 20 and 100 nm and may be extended to gap sizes of 1 nm. We report electron transport measurements of individual SWNTs bridging nanogaps with electrode spacings of approximately 20 nm. Metallic SWNTs exhibit quantum dot behavior with an 80 meV charging energy and a 20 meV energy level splitting. We observe a strong field effect behavior in short semiconducting SWNT segments, evidence for diffusive electron transport in these samples. (C) 2000 American Institute of Physics. [S0003-6951(00)03425-2].

引用

页码：3828 / 3830

页数：3

共 21 条

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