Subband population in a single-wall carbon nanotube diode

被引：117

作者：

Antonov, RD ^{[1
]}

Johnson, AT ^{[1
]}

机构：

[1] Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.83.3274

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We observe current rectification in a molecular diode consisting of a semiconducting single-wall carbon nanotube and an impurity. One-half of the nanotube has no impurity, and it has a current-voltage (I-V) characteristic of a typical semiconducting nanotube. The other half of the nanotube has the impurity on it, and its I-V characteristic is that of a diode. Current in the nanotube diode is carried by holes transported through the molecule's one-dimensional subbands. At 77 K we observe a stepwise increase in the current through the diode as a function of gate voltage, showing that we can control the number of occupied one-dimensional subbands through electrostatic doping.

引用

页码：3274 / 3276

页数：3

共 17 条

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