Geometrical and Electronic Structure Investigations of S-doped Graphene

被引:7
作者
Bi, Dongmei [1 ]
Qiao, Liang [1 ]
Hu, Xiaoying [1 ]
Liu, Shujie [1 ]
机构
[1] Changchun Univ, Coll Sci, Changchun 130022, Peoples R China
来源
LEADING EDGE OF MICRO-NANO SCIENCE AND TECHNOLOGY | 2013年 / 669卷
关键词
Graphene; doping; first-principles calculation; SULFUR;
D O I
10.4028/www.scientific.net/AMR.669.144
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The geometrical and electronic structures of pure graphene and S-doped graphene have been investigated using plane wave pseudopotential method with generalized gradient approximation based on the density functional theory. The local structure change, Mulliken population, density of states, and electron density difference of S-doped graphene have been calculated. It can be observed that the Fermi level shifts towards the conduction band after the doping of sulfur atom. The results also suggest that there are chemical bonds formed between the sulfur and carbon atoms, and the charges transfer from the doped sulfur atom to graphene.
引用
收藏
页码:144 / 148
页数:5
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