Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene

被引：1551

作者：

Panchokarla, L. S. ^{[2
,3
]}

Subrahmanyam, K. S. ^{[2
,3
]}

Saha, S. K. ^{[4
]}

Govindaraj, Achutharao ^{[2
,3
]}

Krishnamurthy, H. R. ^{[4
]}

Waghmare, U. V. ^{[1
]}

Rao, C. N. R. ^{[2
,3
]}

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, Theoret Sci Unit, Bangalore 560064, Karnataka, India

[2] Jawaharlal Nehru Ctr Adv Sci Res, Int Ctr Mat Sci, Chem & Phys Mat Unit, New Chem Unit, Bangalore 560064, Karnataka, India

[3] Jawaharlal Nehru Ctr Adv Sci Res, CSIR, Ctr Excellence Chem, Bangalore 560064, Karnataka, India

[4] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 46期

关键词：

CARBON; APPROXIMATION; NANOTUBES;

D O I：

10.1002/adma.200901285

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Boron- and nitrogen-doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier-concentration and electronic structure of the doped graphenes are demonstrated. Stiffening of the G-band mode and intensification of the defect-related D-band in the Raman spectra are also observed.

引用

页码：4726 / +

页数：6

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