Upgrading the triboluminescence of ZnS:Mn film by optimization of sputtering and thermal annealing conditions

被引:15
作者
Agyeman, O
Xu, CN
Suzuki, M
Zheng, XG
机构
[1] Natl Inst Adv Ind Sci & Technol, AIST, Tosu, Saga 8410052, Japan
[2] Saga Univ, Dept Phys, Saga 8408502, Japan
关键词
D O I
10.1557/JMR.2002.0143
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A statistical method of the design of experiments and analysis of variance (ANOVA) was used to obtain optimized sputtering conditions for oriented ZnS thin films doped with 5% manganese on glass substrates. The effects on the five sputtering factors-substrate temperature, radio frequency power, sputtering pressure, sputtering time, and pre-sputtering time-were simultaneously investigated by using the design of experiments and ANOVA. Through only 16 experiments, it was proved statistically at the 5% level that the substrate temperature was the only significant control factor. ZnS films were then deposited under the optimized sputtering conditions on fused quartz and thermally annealed in a reducing ambient (5% H-2 diluted in Ar) at 500, 600, 700, and 800 degreesC. It was found that the crystallinity and triboluminescence intensity of the films were enhanced by postannealing up to 700 degreesC.
引用
收藏
页码:959 / 963
页数:5
相关论文
共 16 条
  • [1] Statistical approach for optimizing sputtering conditions of highly oriented aluminum nitride thin films
    Akiyama, M
    Xu, CN
    Nonaka, K
    Shobu, K
    Watanabe, T
    [J]. THIN SOLID FILMS, 1998, 315 (1-2) : 62 - 65
  • [2] ALZETA G, 1970, PHYS STATUS SOLIDI A, V1, P177
  • [3] OPTICAL AND STRUCTURAL PROPER TIES OF ZNS AND ZNS-MN FILMS PREPARED BY CVD METHOD
    BESSERGENEV, V
    IVANOVA, EN
    KOVALEVSKAYA, YA
    GROMILOV, SA
    KIRICHENKO, VN
    ZEMSKOVA, SM
    VASILIEVA, IG
    AYUPOV, BM
    SHWARZ, NL
    [J]. MATERIALS RESEARCH BULLETIN, 1995, 30 (11) : 1393 - 1400
  • [4] EMISSION OF CHARGED-PARTICLES FROM INDENTATION FRACTURE OF ROCKS
    ENOMOTO, Y
    HASHIMOTO, H
    [J]. NATURE, 1990, 346 (6285) : 641 - 643
  • [5] INFLUENCE OF MN DOPING CONDITIONS ON ELECTROLUMINESCENT CHARACTERISTICS OF ZNSMN THIN-FILM ELECTROLUMINESCENT (TFEL) DEVICES USING INSULATING CERAMIC
    MIYATA, T
    MINAMI, T
    TAKATA, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 1021 - 1025
  • [6] TRIBOEMISSION FROM VARIOUS MATERIALS IN ATMOSPHERE
    NAKAYAMA, K
    HASHIMOTO, H
    [J]. WEAR, 1991, 147 (02) : 335 - 343
  • [7] ELECTRICAL AND OPTICAL-PROPERTIES OF ZINC-OXIDE THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING FOR TRANSPARENT ELECTRODE APPLICATIONS
    NANTO, H
    MINAMI, T
    SHOOJI, S
    TAKATA, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 1029 - 1034
  • [8] ROPP RC, 1991, LUMINESCENCE SOLID S, P296
  • [9] IONIZED-CLUSTER BEAM DEPOSITION AND EPITAXY AS FABRICATION TECHNIQUES FOR ELECTRON DEVICES
    TAKAGI, T
    YAMADA, I
    SASAKI, A
    [J]. THIN SOLID FILMS, 1977, 45 (03) : 569 - 576
  • [10] ROLE OF SULFUR VACANCIES ON THE ELECTRICAL CHARACTERISTICS OF SPUTTERED FILMS OF ZNS
    TSAKONAS, C
    THOMAS, CB
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (10) : 6098 - 6103