Light emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctions

被引：34

作者：

Cartier, E

Tsang, JC

Fischetti, MV

Buchanan, DA

机构：

[1] IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 36卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(97)00025-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Light emission from silicon/silicon dioxide/metal tunnel junctions is shown to cover a wide wavelength range from to infrared into the near-ultraviolet. The energy of the emitted light increases with increasing junction bias. This behavior appears to be consistent with calculations for light emission from direct conduction to conduction band transition of the hot electrons after tunneling into the silicon.

引用

页码：103 / 106

页数：4

共 4 条

[1] HOT-CARRIER LUMINESCENCE IN SI
BUDE, J
SANO, N
YOSHII, A
[J]. PHYSICAL REVIEW B, 1992, 45 (11): : 5848 - 5856
[2] Anode hole injection and trapping in silicon dioxide
DiMaria, DJ
Cartier, E
Buchanan, DA
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (01) : 304 - 317
[3] PHOTON-EMISSION FROM SLIGHTLY ROUGHENED TUNNEL-JUNCTIONS
LAKS, B
MILLS, DL
[J]. PHYSICAL REVIEW B, 1979, 20 (12): : 4962 - 4980
[4] LIGHT-EMISSION MECHANISM OF SI-MOS TUNNEL-JUNCTIONS
UEHARA, Y
WATANABE, J
FUJIKAWA, S
USHIODA, S
[J]. PHYSICAL REVIEW B, 1995, 51 (04) : 2229 - 2238

← 1 →