Visible electroluminescence from native SiO2 on n-type Si substrates

被引：55

作者：

Yuan, J ^{[1
]}

Haneman, D ^{[1
]}

机构：

[1] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 04期

关键词：

D O I：

10.1063/1.371056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Visible electroluminescence (EL) has been observed from Ag (film or paste)/native SiO2/n-type Si structures. The diodes show good rectification behavior and the EL occurs only under reverse bias conditions when the top Ag electrode is negative. For p-type samples, a forward bias is required. The intensity of the EL is proportional to the diode current and its spectrum peaks at 620-640 nm. A model based on oxygen-related luminescent centers in the native oxide is proposed. (C) 1999 American Institute of Physics. [S0021-8979(99)05016-1].

引用

页码：2358 / 2360

页数：3

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